COMMON ANION HETEROJUNCTIONS: CDTE-CDHGTEMIGLIORATO P; WHITE AM.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 1; PP. 65-69; BIBL. 17 REF.Article

TRANSIENT PHOTOCONDUCTIVITY NEAR A SURFACE IN A SEMI-INFINITE MEDIUMWHITE AM; MIGLIORATO P.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 3; PP. L23-L25Article

SULPHUR DOPED SILICON IR DETECTORS.MIGLIORATO P; ELLIOTT CT.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 443-447; BIBL. 13 REF.Article

JUNCTION ELECTROLUMINESCENCE IN CUINS₂.BRIDENBAUGH PM; MIGLIORATO P.1975; APPL. PHYS. LAB.; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 459-460; BIBL. 9 REF.Article

ELECTROLUMINESCENT AU-GAP DIODESMARGARITONDO G; MIGLIORATO P; PERFETTI P et al.1973; SOLID-STATE ELECTRON.; G.B.; DA. 1973; VOL. 16; NO 4; PP. 523-527; BIBL. 18 REF.Serial Issue

DOUBLE INJECTION IN SEMICONDUCTORS.MIGLIORATO P; MARGARITONDO G; PERFETTI P et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 2; PP. 656-663; BIBL. 21 REF.Article

PHOTO-EXCITATION OF ELECTRONS FROM IONIZED SILVER ACCEPTORS IN SILICON.MIGLIORATO P; ELLIOTT CT; VERE AW et al.1977; SOLID. STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 1; PP. 117-119; BIBL. 9 REF.Article

ELECTRICAL PROPERTIES AND LUMINESCENCE OF CUINSE₂.MIGLIORATO P; SHAY JL; KASPER HM et al.1975; J. ELECTRON. MATER.; U.S.A.; DA. 1975; VOL. 4; NO 2; PP. 209-222; BIBL. 6 REF.Article

SHARP LINE PHOTOCONDUCTIVITY IN SI: SHUMPHREYS RG; MIGLIORATO P; FORTUNATO G et al.1981; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1981; VOL. 40; NO 8; PP. 819-823; BIBL. 25 REF.Article

COUNTERDOPED EXTRINSIC SILICON INFRARED DETECTORS.ELLIOTT CT; MIGLIORATO P; VERE AW et al.1978; INFRARED PHYS.; G.B.; DA. 1978; VOL. 18; NO 2; PP. 65-71; BIBL. 18 REF.Article

SULPHUR-DOPED SILICON BACKGROUND-LIMITED INFRARED PHOTODETECTORS NEAR 77 K.MIGLIORATO P; VERE AW; ELLIOTT CT et al.1976; APPL. PHYS.; GERM.; DA. 1976; VOL. 11; NO 3; PP. 295-297; BIBL. 7 REF.Article

Model for the above-threshold characteristics and threshold voltage in polycrystalline silicon transistorsFORTUNATO, G; MIGLIORATO, P.Journal of applied physics. 1990, Vol 68, Num 5, pp 2463-2467, issn 0021-8979, 5 p.Article

Method for the simultaneous measurement of surface and bulk conductance in semiconductorsMIGLIORATO, P; PARISI, V.Applied physics letters. 1984, Vol 44, Num 2, pp 225-227, issn 0003-6951Article

CDTE/HGCDTE INDIUM-DIFFUSED PHOTODIODESMIGLIORATO P; FARROW RFC; DEAN AB et al.1982; INFRARED PHYS.; ISSN 0020-0891; GBR; DA. 1982; VOL. 22; NO 6; PP. 331-336; BIBL. 13 REF.Article

CARRIER INJECTION IN SEMICONDUCTORS: PREBREAK-DOWN ELECTRICAL CONDUCTION THEORY.CERRINA F; MARGARITONDO G; MIGLIORATO P et al.1975; NUOVO CIMENTO, B; ITAL.; DA. 1975; VOL. 27; NO 2; PP. 229-239; ABS. ITAL. RUSSE; BIBL. 10 REF.Article

Determination of gap state density in polycrystalline silicon by field-effect conductanceFORTUNATO, G; MIGLIORATO, P.Applied physics letters. 1986, Vol 49, Num 16, pp 1025-1027, issn 0003-6951Article

ANALYSIS OF THE ELECTRICAL AND LUMINESCENT PROPERTIES OF CUINSE₂.MIGLIORATO P; SHAY JL; KASPER HM et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 4; PP. 1777-1782; BIBL. 10 REF.Article

CUINSE₂/CDS HETEROJUNCTION PHOTOVOLTAIC DETECTORS.WAGNER S; SHAY JL; MIGLIORATO P et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 8; PP. 434-435; BIBL. 5 REF.Article

NEAR-IR DETECTION BY PBS-GAAS HETEROJUNCTIONSBERNABUCCI F; MARGARITONDO G; MIGLIORATO P et al.1973; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1973; VOL. 15; NO 2; PP. 621-627; ABS. FR.; BIBL. 12 REF.Serial Issue

Statistical model for evaluation of effects of nonuniformity in optically-programmed neural networksYANG, H.-G; REITA, C; MIGLIORATO, P et al.Electronics Letters. 1992, Vol 28, Num 17, pp 1601-1603, issn 0013-5194Article

The sub-threshold characteristics of polysilicon thin-film-transistorsFORTUNATO, G; MEAKIN, D. B; MIGLIORATO, P et al.Japanese journal of applied physics. 1988, Vol 27, Num 11, pp 2124-2127, issn 0021-4922, 1Article

A unified circuit for the polysilicon thin film transistorIZZARD, M. J; MIGLIORATO, P; MILNE, W. I et al.Japanese journal of applied physics. 1991, Vol 30, Num 2A, pp L170-L171, issn 0021-4922, 2Article

Approximate analytical model for the poly-silicon thin film transistorIZZARD, M. J; MIGLIORATO, P; MILNE, W. I et al.Electronics Letters. 1990, Vol 26, Num 16, pp 1284-1286, issn 0013-5194Article

Self-aligned polycrystalline silicon thin-film transistors by laser implantationCOXON, P; LLYOD, M; MIGLIORATO, P et al.Applied physics letters. 1986, Vol 48, Num 26, pp 1785-1786, issn 0003-6951Article

N-CDS/P-SI HETEROJUNCTION SOLAR CELLSCOLUZZA C; GAROZZO M; MALETTA G et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 6; PP. 569-572; BIBL. 11 REF.Article